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Proceedings Paper

Device metrology with high-performance scanning ion beams
Author(s): David C. Joy; Brendan J. Griffin; John Notte; Lewis Stern; Shawn McVey; Bill Ward; Clarke Fenner
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Paper Abstract

A scanning ion microscope (SIM) is analogous to a scanning electron microscope (SEM) but utilizes a beam of helium ions, with energy of 10 to 25 keV , instead of electrons. The SIM potentially offers several advantages for device critical dimension metrology as compared to the more familiar CD-SEM. These include a high brightness source which is sub-nanometer in size, an enhanced secondary electron yield, restricted beam penetration, and superior image contrast and information content. Possible problems include pervasive positive charging, ion implantation, and a lack of detailed experimental and theoretical knowledge about low energy ion interactions with solids. Comparison of line profiles across structures made by electron induced and ion induced secondary electrons show that there are some significant differences between them which arise from the different modes of interaction in the two cases. As a result the algorithms employed for line width determination will require revision in order to produce data which is consistent with CD-SEM data.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181I (5 April 2007); doi: 10.1117/12.710926
Show Author Affiliations
David C. Joy, Univ. of Tennessee (United States)
Brendan J. Griffin, Univ. of Tennessee (United States)
Univ. of Western Australia (Australia)
John Notte, ALIS Corp. (United States)
Lewis Stern, ALIS Corp. (United States)
Shawn McVey, ALIS Corp. (United States)
Bill Ward, ALIS Corp. (United States)
Clarke Fenner, ALIS Corp. (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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