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Proceedings Paper

Novel method of under-etch defect detection for contact layers based on Si substrate using optic wafer inspection tools
Author(s): Byoung-Ho Lee; Jin-Seo Choi; Soo-Bok Chin; Do-Hyun Cho; Chang-Lyong Song
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Paper Abstract

As the design rules of semiconductor devices have decreased, the detection of critical killer defect has became more important. One of killer defect is under-etch defect caused by insufficient contact etch. Although very low throughput only e-beam inspection tool has used for monitoring tools of under-etch defect because optic wafer inspection does not have enough defect signal to detect that on a contact layer. In this study, a new method is suggested for detection of under-etch defect using optic wafer inspection tools which have high throughput and repeatability.

Paper Details

Date Published: 5 April 2007
PDF: 9 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651847 (5 April 2007); doi: 10.1117/12.710746
Show Author Affiliations
Byoung-Ho Lee, Samsung Electronics Co., Ltd. (South Korea)
Jin-Seo Choi, Samsung Electronics Co., Ltd. (South Korea)
Soo-Bok Chin, Samsung Electronics Co., Ltd. (South Korea)
Do-Hyun Cho, Samsung Electronics Co., Ltd. (South Korea)
Chang-Lyong Song, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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