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Study on photochemical analysis system (VLES) for EUV lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
A system for photo-chemical analysis of EUV lithography processes has been
developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch
(Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a
measurement system RDA (Litho Tech Japan) for the development rate of photo-resists,
and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist
profiles and process latitude using the measured development rate data. With this
system, preliminary evaluation of the performance of EUV lithography can be
performed without any lithography tool (Stepper and Scanner system) that is capable of
imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the
EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm
wavelength. The simulation successfully predicts the resist behavior. Thus it is
confirmed that the system enables efficient evaluation of the performance of EUV
lithography processes.
Paper Details
Date Published: 12 April 2007
PDF: 12 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651946 (12 April 2007); doi: 10.1117/12.710516
Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)
PDF: 12 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651946 (12 April 2007); doi: 10.1117/12.710516
Show Author Affiliations
A. Sekiguchi, Litho Tech Japan Corp. (Japan)
Y. Kono, Litho Tech Japan Corp. (Japan)
M. Kadoi, Litho Tech Japan Corp. (Japan)
Y. Minami, Litho Tech Japan Corp. (Japan)
Y. Kono, Litho Tech Japan Corp. (Japan)
M. Kadoi, Litho Tech Japan Corp. (Japan)
Y. Minami, Litho Tech Japan Corp. (Japan)
T. Kozawa, Osaka Univ. (Japan)
S. Tagawa, Osaka Univ. (Japan)
D. Gustafson, Energetiq Technology, Inc. (United States)
P. Blackborow, Energetiq Technology, Inc. (United States)
S. Tagawa, Osaka Univ. (Japan)
D. Gustafson, Energetiq Technology, Inc. (United States)
P. Blackborow, Energetiq Technology, Inc. (United States)
Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)
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