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Proceedings Paper

Critical issues study of nano-imprint tool for semiconductor volume production
Author(s): Hideki Ina; Kazuyuki Kasumi; Eigo Kawakami; Kouji Uda
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Paper Abstract

Nano-imprint lithography (NIL) has the capability to transfer very fine patterns. As NIL was described in ITRS Roadmap in 2003, there are plans to apply NIL to semiconductor volume production at 32nm half pitch devices. This study is describes the critical issues of nano-imprint tool for semiconductor volume production. For an exposure tool supplier such as CANON, overlay control is not a critical issue for nano-imprint lithography because CANON has experience from proximity X-ray lithography (PXL). CANON can build an overlay system for nano-imprint tool using the CANON PXL's alignment and chip magnification correction technologies easily. Using our background, we focus on the Cost of Ownership (CoO) considering mold durability and compare NIL to Extreme Ultra Violet (EUV) and double patterning (DP) by immersion ArF lithography, to clarify the required specification of NIL from the viewpoint of productivity.

Paper Details

Date Published: 15 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170M (15 March 2007); doi: 10.1117/12.710443
Show Author Affiliations
Hideki Ina, Canon Inc. (Japan)
Kazuyuki Kasumi, Canon Inc. (Japan)
Eigo Kawakami, Canon Inc. (Japan)
Kouji Uda, Canon Inc. (Japan)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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