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Proceedings Paper

Phase fluorometry for semiconductor lifetime measurement
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Paper Abstract

Understanding and quantifying nonradiative recombination is a critical factor for the successful laser cooling of semiconductors. The usual approach to measuring the nonradiative lifetime employs pulsed photoexcitation and monitors the luminescence decay via time-resolved photon counting. We present an alternative approach that employs phase fluorometry with a lock-in amplifier. A sinusoidally modulated diode laser is used for excitation. Lifetime data are extracted from the frequency dependent phase shift and amplitude response of the photolumi-nescence signal, detected by a photomultiplier tube. Samples studied include high quality AlGaAs/GaAs/AlGaAs and GaInP/GaAs/GaInP double heterostructures, grown by MBE and MOCVD. Data over a temperature range from 10 to 300 K is compared with results obtained in time-domain measurements.

Paper Details

Date Published: 13 March 2007
PDF: 6 pages
Proc. SPIE 6461, Laser Cooling of Solids, 646108 (13 March 2007); doi: 10.1117/12.710064
Show Author Affiliations
Alexander R. Albrecht, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Ramesh B. Laghumavarapu, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Babak Imangholi, Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, Univ. of New Mexico (United States)
Kevin J. Malloy, Ctr. for High Technology Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6461:
Laser Cooling of Solids
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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