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Proceedings Paper

Investigations of surface defects on semiconductor fluorescence lifetime
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Paper Abstract

We investigate the role of surface defects on semiconductor fluorescence lifetime using near-field scanning optical microscopy (NSOM) and time correlated single photon counting (TCSPC). A conventional far-field microscope is used to excite a GaAs sample and subsequent fluorescence is collected with a fiber coupled near-field probe. With the application of custom fitting algorithms, we find fluorescence lifetimes in the vicinity of surface defects to be significantly reduced with respect to fluorescence lifetimes measured in defect free regions.

Paper Details

Date Published: 7 March 2007
PDF: 7 pages
Proc. SPIE 6461, Laser Cooling of Solids, 646109 (7 March 2007); doi: 10.1117/12.709935
Show Author Affiliations
Daniel A. Bender, The Univ. of New Mexico (United States)
Michael P. Hasselbeck, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6461:
Laser Cooling of Solids
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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