Share Email Print
cover

Proceedings Paper

Heterostructure design optimization for laser cooling of GaAs
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

Paper Details

Date Published: 15 March 2007
PDF: 10 pages
Proc. SPIE 6461, Laser Cooling of Solids, 64610G (15 March 2007); doi: 10.1117/12.709847
Show Author Affiliations
B. Imangholi, Univ. of New Mexico (United States)
C. Wang, Univ. of New Mexico (United States)
E. Soto, Univ. of New Mexico (United States)
M. Sheik-Bahae, Univ. of New Mexico (United States)
A. Stintz, Ctr. for High Technology Materials (United States)
K. Malloy, Ctr. for High Technology Materials (United States)
N. Nuntawong, Ctr. for High Technology Materials (United States)
R. Epstein, Los Alamos National Lab. (United States)
The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6461:
Laser Cooling of Solids
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

© SPIE. Terms of Use
Back to Top