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Proceedings Paper

Pulsed Yb:YAG thin disk laser with 100 W at 515 nm
Author(s): G. Hollemann; P. Heist; S. Heinitz; J. Symanowski; T. Eidam; C. Stolzenburg; A. Giesen
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Paper Abstract

Pulsed lasers with high average output power in the green spectral range are of interest for laser annealing applications. In this paper an efficient pulsed diode-pumped Yb:YAG thin disk laser with intracavity frequency doubling is presented. The Yb:YAG laser crystal disk has a thickness of 180 &mgr;m and a diameter of 10 mm and is pumped by a laser diode stack at a wavelength of 938 nm. The disk is soldered to a water-cooled Cu-W heat sink and exhibits a nearly perfect spherical surface. The folded resonator is dynamically stable with a beam factor of M2 = 5 and which is matched to the requirements of the application. Acousto-optical and electro-optical switches are investigated to operate the laser in the cavity-dumping mode. An average output power of 150 W at 515 nm is achieved. The diode-to-green efficiency is about 28%. A critically phase matched LBO crystal is used for intracavity second harmonic generation. We show that stable pulsing is obtained from 10 kHz to 150 kHz. The pulse-width can be varied from 200 ns to 700 ns by control of the low-loss period of the switching element. The experimental results are compared with theoretical modeling of the system and first application results are discussed.

Paper Details

Date Published: 19 February 2007
PDF: 7 pages
Proc. SPIE 6451, Solid State Lasers XVI: Technology and Devices, 64510D (19 February 2007); doi: 10.1117/12.709548
Show Author Affiliations
G. Hollemann, JENOPTIK Laser, Optik, Systeme GmbH (Germany)
P. Heist, JENOPTIK Laser, Optik, Systeme GmbH (Germany)
S. Heinitz, JENOPTIK Laser, Optik, Systeme GmbH (Germany)
J. Symanowski, JENOPTIK Laser, Optik, Systeme GmbH (Germany)
T. Eidam, JENOPTIK Laser, Optik, Systeme GmbH (Germany)
C. Stolzenburg, Univ. Stuttgart (Germany)
A. Giesen, Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 6451:
Solid State Lasers XVI: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori; Norman Hodgson, Editor(s)

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