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Proceedings Paper

Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method
Author(s): Hiroko Nakamura; Mitsuhiro Omura; Souichi Yamashita; Yasuyuki Taniguchi; Junko Abe; Satoshi Tanaka; Soichi Inoue
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Paper Abstract

It was shown previously that the Double Line and Space (L&S) Formation Method (DLFM) is superior to other methods for forming a dense contact hole (C/H) resist pattern by simulation and 0.30 k1 1:1 C/H resist pattern was formed experimentally. In this paper, a through process of C/H formation from resist patterning to metal filling is presented. The square C/Hs transferred to an oxide film from the resist pattern formed by the DLFM could be filled with metal, although the transferred C/Hs had square corners in comparison with the conventional C/H resist patterning. On the other hand, the combination of the DLFM and the 'Pack and Cover Process' makes it possible to form resist random C/Hs on grids. So, the possibility of forming random C/Hs filled with metal is shown. Moreover, the resolution limit of the DLFM is discussed. 0.29 k1 (half pitch 65 nm) and 0.27 k1 (half pitch 56 nm) 1:1 C/H resist pattern could be formed with optimized dipole illumination. So, random C/Hs with k1 below 0.30 are expected to be formed.

Paper Details

Date Published: 26 March 2007
PDF: 10 pages
Proc. SPIE 6520, Optical Microlithography XX, 65201E (26 March 2007); doi: 10.1117/12.709133
Show Author Affiliations
Hiroko Nakamura, Toshiba Corp. (Japan)
Mitsuhiro Omura, Toshiba Corp. (Japan)
Souichi Yamashita, Toshiba Corp. (Japan)
Yasuyuki Taniguchi, Toshiba Corp. (Japan)
Junko Abe, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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