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Proceedings Paper

Geometrical description of the microloading effect in silicon trench structures
Author(s): Iryna Titarenko; Enna Altshuler; Rama Tweg
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Paper Abstract

Standard Model Based OPC is based on resist and after etch CD measurements. In the case of non-linear photo-etch bias due to the etch microloading effect two-dimensional configuration can be wrongly corrected by the OPC model and hence lead to possible Si bridging. This paper reports a geometrical model for the determination of potential bridging in silicon trench structures that depends on the proximity of neighboring features. The model shows a possibility to detect and correct the post OPC data base by taking into account the non-linear effect caused by the non linear etch microloading. This approach can at the end leave the OPC model with a more straightforward photo resist model (and prevent the need to recreate a new OPC model), awhile-adding additional step of correction just in the locations of killer effects like bridging may occur.

Paper Details

Date Published: 27 March 2007
PDF: 9 pages
Proc. SPIE 6520, Optical Microlithography XX, 65204D (27 March 2007); doi: 10.1117/12.708892
Show Author Affiliations
Iryna Titarenko, Tower Semiconductors, Ltd. (Israel)
Enna Altshuler, Tower Semiconductors, Ltd. (Israel)
Rama Tweg, Tower Semiconductors, Ltd. (Israel)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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