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Proceedings Paper

Q-modulated semiconductor laser
Author(s): Jian-Jun He
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Paper Abstract

A novel Q-modulation scheme for high-speed modulation of semiconductor laser is presented. The modulator consists of an anti-resonant Fabry-Perot cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Static and small-signal dynamic simulation results are presented, demonstrating its operating principle and distinct characteristics. The monolithically integrated Q-modulated laser (QML) has potential advantages of high speed, high extinction ratio, low wavelength chirp and high power efficiency.

Paper Details

Date Published: 9 February 2007
PDF: 7 pages
Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 64760S (9 February 2007); doi: 10.1117/12.708432
Show Author Affiliations
Jian-Jun He, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 6476:
Optoelectronic Integrated Circuits IX
Louay A. Eldada; El-Hang Lee, Editor(s)

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