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Proceedings Paper

Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling
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Paper Abstract

We present the growth and characterization of high quality semiconductor laser cooling material. The structure consists of GaAs passivated by InGaP which has been reported to have a longest surface recombination lifetime. GaAs was grown on 10 degree miscut GaAs substrate and sandwiched between lattice matched In0.49Ga0.51P. This structure was grown by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The material was grown in the temperature range of 550 to 700 °C at 60.8 Torr. The morphology of InGaP was improved by the growth on 10 degree miscut substrate along <110> direction, which is confirmed by X-ray diffraction (XRD). The uninterrupted growth technique and GaP separation layer are employed to prevent the indium segregation and P/As intermixing at the interface between InGaP and GaAs. The effects of V/III ratio, growth temperature and material precursors on material impurities were also studied. The carrier lifetimes were measured using the time resolved photoluminescence (TRPL) technique at cryogenic temperatures. The experimental results show that the carrier lifetime was increased by 5 times with the use of TBA as arsenic source in place of AsH3. Recent results show a highest room temperature carrier lifetime of 2 &mgr;sec.

Paper Details

Date Published: 7 March 2007
PDF: 6 pages
Proc. SPIE 6461, Laser Cooling of Solids, 64610M (7 March 2007); doi: 10.1117/12.708337
Show Author Affiliations
R. B. Laghumavarapu, Ctr. for High Technoogy Materials, Univ. of New Mexico (United States)
N. Nuntawong, Ctr. for High Technoogy Materials, Univ. of New Mexico (United States)
A. R. Albrecht, Ctr. for High Technoogy Materials, Univ. of New Mexico (United States)
D. L. Huffaker, Ctr. for High Technoogy Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6461:
Laser Cooling of Solids
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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