Share Email Print

Proceedings Paper

Purge micro-environment with ionized air to reduce chances of ESD damages to wafers
Author(s): Huaping Wang; Yingkai Liu; Mike Cisewski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Electrostatic discharge (ESD) problem resulting from charges on wafers is a serious concern in IC manufacturing processes. Even though micro-environments, such as a FOUP or a SMIF pod, provide path to ground to conduct away charges on wafers, this method cannot remove charges on the insulative features on a work-in-process wafer. In this study, we integrated an ionization module to a FOUP purge system to neutralize charges on wafers. With a full load of wafers, ionized nitrogen entered the FOUP and effectively reduced the wafer charge level from 1,000 v/cm to 100 v/cm within 5 minutes. The effectiveness of neutralizing charges and ease of integrating with currently available purge facility enable this method a promising way to help reduce wafer charges, thus reduce the possibility of ESD damages to ICs on wafer. The same idea can be applied to reduce charges on reticles in a recticle pod.

Paper Details

Date Published: 5 April 2007
PDF: 9 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183Y (5 April 2007); doi: 10.1117/12.708055
Show Author Affiliations
Huaping Wang, Entegris, Inc. (United States)
Yingkai Liu, Entegris, Inc. (United States)
Mike Cisewski, Entegris, Inc. (United States)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

© SPIE. Terms of Use
Back to Top