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Proceedings Paper

High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities
Author(s): Oleg Mitrofanov; S. Schmult; M. J. Manfra; T. Siegrist; N. G. Weimann; A. M. Sergent; R. J. Molnar
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Paper Abstract

We demonstrate high-reflectivity crack-free Al0.18Ga0.82N/Al0.8Ga0.2N distributed Bragg reflectors (DBR) and monolithic microcavities grown by molecular beam epitaxy on thick c-axis GaN templates. The elastic strain energy in the epilayer is minimized by compensating the compressive and tensile stress in every period of the DBR structure. A 25 period DBR mirror provides a 26nm-wide stop band centered at 347 nm with the maximum reflectivity higher than 99%. The high-reflectivity DBRs can be used to form high Q-factor monolithic AlGaN/AlGaN microcavities.

Paper Details

Date Published: 8 February 2007
PDF: 5 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731G (8 February 2007); doi: 10.1117/12.707924
Show Author Affiliations
Oleg Mitrofanov, Bell Labs./Alcatel-Lucent (United States)
S. Schmult, Bell Labs./Alcatel-Lucent (United States)
M. J. Manfra, Bell Labs./Alcatel-Lucent (United States)
T. Siegrist, Bell Labs./Alcatel-Lucent (United States)
N. G. Weimann, Bell Labs./Alcatel-Lucent (United States)
A. M. Sergent, Bell Labs./Alcatel-Lucent (United States)
R. J. Molnar, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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