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Proceedings Paper

High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer
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Paper Abstract

AlGaN/AlGaN distributed Bragg reflectors (DBRs) designed for the ultraviolet spectral region have been attained. The crack-free structures were grown on c-plane sapphire by plasma assisted molecular beam epitaxy (MBE). To minimize the built-in strain in DBRs, a thin buffer layer was used directly on c-plane sapphire. A peak reflectivity of 95% at 381 nm with a 21 nm stop band width was obtained at room temperature (RT) using a 32.5 pairs Al0.7Ga0.3N/Al0.15Ga0.85N DBR. With a driving force for DBRs and emitting regions in wide band gap semiconductor microcavities, such as those based on GaN and ZnO, is the quest for cavity polariton which is the coupled mode between the exciton and photon modes. Moreover, the exploitation of cavity polaritons could be expected in the course of the development of extremely low-threshold optoelectronics devices.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731H (8 February 2007); doi: 10.1117/12.707886
Show Author Affiliations
Ryoko Shimada, Virginia Commonwealth Univ. (United States)
Jinqiao Xie, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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