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Proceedings Paper

Charge trapping on defects in AlGaN/GaN field effect transistors
Author(s): Oleg Mitrofanov; M. J. Manfra
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Paper Abstract

The presence of electronic traps in GaN-based devices limits device performance and reliability. Crystallographic defects in the bulk and electronic states on the surface act as trapping centers. We review the trapping phenomena in GaN-based high electron mobility transistors and discuss a characterization method, current transient spectroscopy, applied for trap identification. Probing the charge trapping mechanisms allows us to extract the trap characteristics including the trapping potential, the binding energy of an electron on the trap, and the physical location of the active centers in the device.

Paper Details

Date Published: 8 February 2007
PDF: 6 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731M (8 February 2007); doi: 10.1117/12.707740
Show Author Affiliations
Oleg Mitrofanov, Bell Labs.\Alcatel-Lucent (United States)
M. J. Manfra, Bell Labs.\Alcatel-Lucent (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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