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Proceedings Paper

Electrical properties of back-gated n-layer graphene films
Author(s): P. Joshi; A. Gupta; P. C. Eklund; S. A. Tadigadapa
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Paper Abstract

We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (VG) in the range 25 < VG < 110 V; some films exhibited as much as a factor of ~50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.

Paper Details

Date Published: 12 February 2007
PDF: 8 pages
Proc. SPIE 6464, MEMS/MOEMS Components and Their Applications IV, 646409 (12 February 2007); doi: 10.1117/12.707654
Show Author Affiliations
P. Joshi, The Pennsylvania State Univ. (United States)
A. Gupta, The Pennsylvania State Univ. (United States)
P. C. Eklund, The Pennsylvania State Univ. (United States)
S. A. Tadigadapa, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 6464:
MEMS/MOEMS Components and Their Applications IV
Srinivas A. Tadigadapa; Reza Ghodssi; Albert K. Henning, Editor(s)

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