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Proceedings Paper

Development of high-performance multi-layer resist process with hardening treatment
Author(s): Yoshiharu Ono; Takeo Ishibashi; Atsumi Yamaguchi; Tetsuro Hanawa; Masahiro Tadokoro; Kazunori Yoshikawa; Kazumasa Yonekura; Keiko Matsuda; Takeshi Matsunobe; Yasushi Fujii; Takeshi Tanaka
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Paper Abstract

In the manufacture of devices beyond the 45 nm node, it is important to employ a high-performance multi-layer resist (MLR) process that uses silicon containing ARC (Si-ARC) and spin on carbon (SOC). We examined an additional hardening process of SOC by H2 plasma treatment in order to improve the etching durability of the MLR. The dry etching durability of H2-plasma-hardened SOC film showed a drastic improvement, while the wiggling features of the MLR without H2 treatment observed after SiO2 etching disappeared completely. The hardening mechanism of SOC was analyzed by Fourier transform infrared spectroscopy (FTIR) with gradient shaving preparation (GSP) and Raman spectrometry. The formation of diamond-like amorphous carbon at a depth of approximately 50 nm was observed and was attributed to the improvement in the dry etching durability. In addition, the MLR stack with hardening has good reflectivity characteristics. The simulated reflectivity at the interface between the bottom of the resist and top surface of the MLR stack with hardening below 0.6% was attained over a wide range of Si-ARC thicknesses and hyper NA (~1.3) regions. The measured refractive indices of the hardened SOC film at 193 nm had a high value at the surface; however, they gradually decreased toward the inner region and finally became the same as those of untreated SOC. This might be the origin of the estimated excellent reflectivity characteristics.

Paper Details

Date Published: 2 April 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192O (2 April 2007); doi: 10.1117/12.707615
Show Author Affiliations
Yoshiharu Ono, Renesas Technology Corp. (Japan)
Takeo Ishibashi, Renesas Technology Corp. (Japan)
Atsumi Yamaguchi, Renesas Technology Corp. (Japan)
Tetsuro Hanawa, Renesas Technology Corp. (Japan)
Masahiro Tadokoro, Renesas Technology Corp. (Japan)
Kazunori Yoshikawa, Renesas Technology Corp. (Japan)
Kazumasa Yonekura, Renesas Technology Corp. (Japan)
Keiko Matsuda, Toray Research Ctr. Inc. (Japan)
Takeshi Matsunobe, Toray Research Ctr. Inc. (Japan)
Yasushi Fujii, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takeshi Tanaka, Tokyo Ohka Kogyo Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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