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Proceedings Paper

Nano patterning fabrication by low energy microcolumn lithography
Author(s): Takatoshi Yoshimoto; Seok Hyun Hwang; Kyong Hon Kim; Do Jin Seong; Dea Wook Kim; Young Chul Kim; Seung Jun Ahn; Ho Seob Kim
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Paper Abstract

Nano-pattering process by low-voltage electron beam lithography based on microcolumn with beam energy of 500 eV has been developed. Low kV exposure provides the advantages of high sensitivity, reduced charging, and a lack of proximity and heating effects. However a low-voltage electron beam has very thin penetration range. At 500 V, the penetration range is less than 20 nm, while typical resist thickness is > 200 nm. A resist process with bilayer scheme, 17 nm-thick PMMA resist on 100 nm-thick SiO2 layer, and wet etch method was demonstrated for 250 nm line patterns transfer to Si substrate. The process was applied to fabricate periodic grating patterns on a silicon substrate. The results of nano-pattern process by low energy microcolumn lithography will be discussed in detail.

Paper Details

Date Published: 9 February 2007
PDF: 7 pages
Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 647612 (9 February 2007); doi: 10.1117/12.707374
Show Author Affiliations
Takatoshi Yoshimoto, Sun Moon Univ. (South Korea)
Seok Hyun Hwang, Inha Univ. (South Korea)
Kyong Hon Kim, Inha Univ. (South Korea)
Do Jin Seong, Sun Moon Univ. (South Korea)
Dea Wook Kim, Sun Moon Univ. (South Korea)
Young Chul Kim, Sun Moon Univ. (South Korea)
Seung Jun Ahn, Sun Moon Univ. (South Korea)
Ho Seob Kim, Sun Moon Univ. (South Korea)

Published in SPIE Proceedings Vol. 6476:
Optoelectronic Integrated Circuits IX
Louay A. Eldada; El-Hang Lee, Editor(s)

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