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Proceedings Paper

AlGaN/GaN field-plate FETs for microwave power applications
Author(s): H. Miyamoto; Y. Ando; Y. Okamoto; T. Nakayama; A. Wakejima; T. Inoue; Y. Murase; K. Ota; K. Yamanoguchi; N. Kuroda; M. Tanomura; K. Matsunaga
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Paper Abstract

This paper describes the performance of AlGaN/GaN Field-Plate FETs and amplifiers for microwave power applications. Recessed-gate FETs with a single field-modulating plate (FP) and advanced dual field-modulating plates (FP's) FP are developed for high-voltage microwave power operation. The developed single FP-FETs exhibited a 230-W CW output power at 2 GHz and a 100-W CW output power at 5 GHz. The developed dual FP-FET provides higher gain, increased linearity and stability since the second FP effectively reduces feedback capacitance. Under a 2.15-GHz W-CDMA modulation scheme, the dual-FP-FET achieved a-state-of-the-art combination of 160-W output power and a 17.5 dB linear gain. The developed amplifier using two device dice for W-CDMA base stations delivers a 370-W peak output power and the amplifier for other L/S band high power applications delivers a pulsed 750-W output power at 2.14 GHz.

Paper Details

Date Published: 15 February 2007
PDF: 10 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647315 (15 February 2007); doi: 10.1117/12.707334
Show Author Affiliations
H. Miyamoto, R&D Association for Future Electron Devices (Japan)
Y. Ando, R&D Association for Future Electron Devices (Japan)
Y. Okamoto, R&D Association for Future Electron Devices (Japan)
T. Nakayama, R&D Association for Future Electron Devices (Japan)
A. Wakejima, R&D Association for Future Electron Devices (Japan)
T. Inoue, R&D Association for Future Electron Devices (Japan)
Y. Murase, R&D Association for Future Electron Devices (Japan)
K. Ota, R&D Association for Future Electron Devices (Japan)
K. Yamanoguchi, R&D Association for Future Electron Devices (Japan)
N. Kuroda, R&D Association for Future Electron Devices (Japan)
M. Tanomura, R&D Association for Future Electron Devices (Japan)
K. Matsunaga, R&D Association for Future Electron Devices (Japan)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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