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Proceedings Paper

Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy
Author(s): Yi Fu; Q. Fan; S. Chevtchenko; Ü. Özgür; H. Morkoç; You Ke; Robert Devaty; W. J. Choyke; C. K. Inoki; T. S. Kuan
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Paper Abstract

Growth and polarity control of GaN and AlN on carbon-face SiC (C-SiC) by metalorganic vapor phase epitaxy (MOVPE) are reported. The polarities of GaN and AlN layers were found to be strongly dependent on the pre-growth treatment of C-SiC substrates. A pre-flow of trimethyaluminum (TMAl) or a very low NH3/TMAl ratio resulted in Al(Ga)-polarity layers on C-SiC. Otherwise, N-polarity layers resulted. The polarities of AlN and GaN layers were conveniently determined by their etching rate in KOH or H3PO4, namely the etching rate on N-polarity is substantial larger, a method reported earlier. We suggest that the Al adatoms form several Al adlayers on C-SiC and change the incorporation sequence of Ga(Al) and N leading to a metal polarity surface. In addition, the hexagonal pyramids, typical on N-polarity GaN surface, are absent on N-polarity GaN grown on off-axis C-SiC owing to high density of terraces on the substrate surface. The properties of GaN layers grown on C-SiC have been studied by X-ray diffraction and are reported in this paper.

Paper Details

Date Published: 8 February 2007
PDF: 11 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647305 (8 February 2007); doi: 10.1117/12.706938
Show Author Affiliations
Yi Fu, Virginia Commonwealth Univ. (United States)
Q. Fan, Virginia Commonwealth Univ. (United States)
S. Chevtchenko, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)
You Ke, Univ. of Pittsburgh (United States)
Robert Devaty, Univ. of Pittsburgh (United States)
W. J. Choyke, Univ. of Pittsburgh (United States)
C. K. Inoki, SUNY/Univ. at Albany (United States)
T. S. Kuan, SUNY/Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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