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Proceedings Paper

Performance of chemically amplified resists at half-pitch of 45 nm and below
Author(s): Yayi Wei; Markus Bender; Wolf-Dieter Domke; Antje Laessig; Michael Sebald; Sven Trogisch; David Back
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Paper Abstract

The chemically-amplified resists have been exposed by hyper-NA 193nm immersion and EUV lithography. Patterns with 45nm half-pitch and below are investigated for process windows and line-edge roughness. Although the 193nm immersion and EUV lithography have totally different optics, an overlap of the resolution capability is clearly observed around 45nm half-pitches. Both lithographic processes show comparable process windows for 45nm dense lines. The 193i resist better responds to its aerial image than that of the EUV resist. Although the EUV tool has the resolution capability down to 20nm half-pitch, immature resist process limits the current resolution to 35nm half-pitch.

Paper Details

Date Published: 2 April 2007
PDF: 7 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190R (2 April 2007); doi: 10.1117/12.706887
Show Author Affiliations
Yayi Wei, Qimonda North America Corp. (United States)
Markus Bender, Qimonda Dresden GmbH & Co. OHG (Germany)
Wolf-Dieter Domke, Qimonda AG (Germany)
Antje Laessig, Qimonda Dresden GmbH & Co. OHG (Germany)
Michael Sebald, Qimonda AG (Germany)
Sven Trogisch, Qimonda Dresden GmbH & Co. OHG (Germany)
David Back, Qimonda North America Corp. (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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