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Proceedings Paper

Point defect reduction in GaN layers grown with the aid of SiNx nanonet by metalorganic chemical vapor deposition
Author(s): S. A. Chevtchenko; J. Xie; Y. Fu; X. Ni; H. Morkoç; C. W. Litton
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Paper Abstract

Reduction of deep centers in GaN layers grown employing nano-ELO SiNx porous nanonetworks has been studied by deep-level transient spectroscopy (DLTS). The obtained concentrations of deep traps in layers with SiNx nanonetworks were compared with an otherwise identical reference sample and with another sample grown by employing conventional ELO technique. Two traps, labeled A (0.54-0.58 eV) and B (0.20-0.23 eV), were delineated in all layers with trap A being dominant in the temperature range 80-400 K. The concentration of trap A in SiNx layers was found to be lower by 2-4 times compare to the reference sample. The minimum concentration 7.5x1014 cm-3 was obtained in the layer grown on SiO2 stripe pattern which is ~6 times lower compare to the reference sample. We have found the logarithmic capture mechanism up to ~20 ms for deep center A. Considering that the lateral growth mainly reduces the edge dislocations in our films it is tempting to suggest that structural defects that may have a direct and or indirect role in the creation of the dominant trap which we believe are located close to each other along the edge threading dislocation lines. In addition, a small blue shift, compare to a strain free layers, of the neutral-donor-bound-exciton line (D0XA) observed in the photoluminescence spectra of the samples grown with lateral overgrowth is indicative of partial strain relief.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730N (8 February 2007); doi: 10.1117/12.706828
Show Author Affiliations
S. A. Chevtchenko, Virginia Commonwealth Univ. (United States)
J. Xie, Virginia Commonwealth Univ. (United States)
Y. Fu, Virginia Commonwealth Univ. (United States)
X. Ni, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)
C. W. Litton, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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