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Proceedings Paper

Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures
Author(s): Ya. I. Alivov; X. Bo; Q. Fan; S. Akarca-Biyikli; D. Johnstone; O. Lopatiuk; L. Chernyak; C. W. Litton; H. Morkoç
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Paper Abstract

Electrical properties of n-ZnO/n-GaN isotype heterostructures prepared by rf-sputtering of ZnO films on GaN layers which in turn grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n- ZnO/n-GaN diodes exhibited highly rectifying characteristics with forward and reverse currents being ~1.43x10-2 A/cm2 and ~2.4x10-4 A/cm2, respectively, at ±5 V. From the Arrhenius plot built representing the temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements and depending on excitation conditions the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 &mgr;m. The temperature dependent EBIC measurements yielded an activation energy of 0.462 ± 0.073 V.

Paper Details

Date Published: 8 February 2007
PDF: 5 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740E (8 February 2007); doi: 10.1117/12.706300
Show Author Affiliations
Ya. I. Alivov, Virginia Commonwealth Univ. (United States)
X. Bo, Virginia Commonwealth Univ. (United States)
Q. Fan, Virginia Commonwealth Univ. (United States)
S. Akarca-Biyikli, Virginia Commonwealth Univ. (United States)
D. Johnstone, SEMETROL (United States)
O. Lopatiuk, Univ. of Central Florida (United States)
L. Chernyak, Univ. of Central Florida (United States)
C. W. Litton, Air Force Research Lab. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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