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Proceedings Paper

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers
Author(s): Paul Crump; Steve Patterson; Sandrio Elim; Shiguo Zhang; Mike Bougher; Jason Patterson; Suhit Das; Weimin Dong; Mike Grimshaw; Jun Wang; Damian Wise; Mark DeFranza; Jake Bell; Jason Farmer; Mark DeVito; Rob Martinsen; Alexey Kovsh; Fatima Toor; Claire F. Gmachl
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Paper Abstract

Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635- nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gap in the 1100 to 1280-nm range. There are many important medical and sensing applications in this range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

Paper Details

Date Published: 7 February 2007
PDF: 11 pages
Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560E (7 February 2007); doi: 10.1117/12.706177
Show Author Affiliations
Paul Crump, nLight Corp. (United States)
Steve Patterson, nLight Corp. (United States)
Sandrio Elim, nLight Corp. (United States)
Shiguo Zhang, nLight Corp. (United States)
Mike Bougher, nLight Corp. (United States)
Jason Patterson, nLight Corp. (United States)
Suhit Das, nLight Corp. (United States)
Weimin Dong, nLight Corp. (United States)
Mike Grimshaw, nLight Corp. (United States)
Jun Wang, nLight Corp. (United States)
Damian Wise, nLight Corp. (United States)
Mark DeFranza, nLight Corp. (United States)
Jake Bell, nLight Corp. (United States)
Jason Farmer, nLight Corp. (United States)
Mark DeVito, nLight Corp. (United States)
Rob Martinsen, nLight Corp. (United States)
Alexey Kovsh, NL Nanosemiconductor GmbH (Germany)
Fatima Toor, Princeton Univ. (United States)
Claire F. Gmachl, Princeton Univ. (United States)


Published in SPIE Proceedings Vol. 6456:
High-Power Diode Laser Technology and Applications V
Mark S. Zediker, Editor(s)

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