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Proceedings Paper

Atomic scale investigations of dislocation structures and properties in GaN
Author(s): Pierre Ruterana; Imad Balabbas; Jun Chen; Antoine Bere
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Proc. SPIE 6473, Gallium Nitride Materials and Devices II, ; doi: 10.1117/12.705812
Show Author Affiliations
Pierre Ruterana, ENSICAEN (France)
Imad Balabbas, ENSICAEN (France)
Jun Chen, Univ. de Caen Basse-Normandie (France)
Antoine Bere, ENSICAEN (France)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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