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Proceedings Paper

Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates
Author(s): Y.-C. Xin; A. Stintz; H. Cao; L. Zhang; A. L. Gray; S. R. Bank; M. Osinski; J. Harris; L. F. Lester
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Paper Abstract

In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-&mgr;m InAs dots-in-a-Well (DWELL), 1.25-&mgr;m InGaAs single quantum well (SQW), and 1.55-&mgr;m GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with sub-picosecond RMS jitter, high pulse peak power (1W) and narrow pulse width (< 10 ps) were demonstrated in monolithic two-section InAs DWELL passive MLLs. With the 42% indium InGaAs SQW MLL, a record high-temperature performance for a monolithic passively mode-locked semiconductor laser is found. Compared with the typical operating range of the InAs DWELL devices (<60°C), the operation is in excess of 100 °C. The first 1.55-&mgr;m GaInNAsSb SQW MLL operates at a repetition rate of 5.8 GHz and has a 3-dB bandwidth of 170 kHz in the RF spectrum indicating respectable jitter.

Paper Details

Date Published: 22 March 2007
PDF: 10 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681L (22 March 2007); doi: 10.1117/12.705662
Show Author Affiliations
Y.-C. Xin, CHTM/Univ. of New Mexico (United States)
A. Stintz, CHTM/Univ. of New Mexico (United States)
H. Cao, CHTM/Univ. of New Mexico (United States)
L. Zhang, Zia Laser, Inc. (United States)
A. L. Gray, Zia Laser, Inc. (United States)
S. R. Bank, Stanford Univ. (United States)
M. Osinski, CHTM/Univ. of New Mexico (United States)
J. Harris, Zia Laser, Inc. (United States)
L. F. Lester, CHTM/Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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