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Proceedings Paper

Active transmission control based on photonic-crystal MOS capacitor
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Paper Abstract

Silicon nanophotonics has recently attracted great attention since it offers an opportunity for low cost opto-electronic solutions based on silicon complementary metal oxide semiconductor (MOS) technology. Photonic crystal (PhC) structures with slow photon effect are expected to play a key role in future large-scale ultra-compact photonic integrated circuits. A novel vertical-MOS-capacitor-based silicon PhC waveguide structure was proposed to achieve active transmission control via the free carrier plasma dispersion effect. We designed and fabricated a single-arm PhC waveguide with MOS gate defect using silicon-on-insulator (SOI) substrate and demonstrated that a defect mode was present in the infrared region. Plane wave expansion (PWE) method based simulation indicated that high group index of the fabricated PhC waveguide could be achieved near the transmission band edge. Further investigation demonstrated that such PhC MOS capacitor would be a good candidate to realize ultra-compact transmission control.

Paper Details

Date Published: 6 February 2007
PDF: 9 pages
Proc. SPIE 6480, Photonic Crystal Materials and Devices VI, 64800W (6 February 2007); doi: 10.1117/12.705613
Show Author Affiliations
Xiaonan Chen, The Univ. of Texas at Austin (United States)
Lanlan Gu, The Univ. of Texas at Austin (United States)
Wei Jiang, Omega Optics, Inc. (United States)
Ray T. Chen, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 6480:
Photonic Crystal Materials and Devices VI
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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