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Proceedings Paper

Mitigating hot phonons in high power optoelectronic devices based on wide gap semiconductors
Author(s): Jacob B. Khurgin
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Paper Abstract

This work discusses critical role played by hot phonons in limiting high speed performance of electronic and optical devices based on wide gap nitride semiconductors A simple model is introduced that explains velocity saturation in the wide bandgap semiconductors and, based, on the experimental data, show that hot phonons in nitrides present unique challenge. Various methods of mitigating the effects of hot phonons - ranging from creating conditions for stimulated phonon emission to use of disorder are discussed.

Paper Details

Date Published: 8 February 2007
PDF: 7 pages
Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710Y (8 February 2007); doi: 10.1117/12.705110
Show Author Affiliations
Jacob B. Khurgin, Johns Hopkins Univ. (United States)


Published in SPIE Proceedings Vol. 6471:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Marshall J. Cohen; Joseph P. Estrera; Kong-Thon Tsen; Jin-Joo Song, Editor(s)

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