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Proceedings Paper

Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope
Author(s): André Lochthofen; Wolfgang Mertin; Gerd Bacher; Michael Furitsch; Georg Brüderl; Berthold Hahn; Uwe Strauss; Volker Härle
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Paper Abstract

We demonstrate the potential of Kelvin Probe Force Microscopy (KPFM) for analyzing degradation effects in GaN-based laser diodes (LDs). Thereby, the surface potential at the mirror facet was measured locally for both, unbiased LDs and LDs exposed to a well-defined current. In the unbiased case, our KPFM measurements demonstrate the impact of aging on the mirror facet, which we attribute to a photon enhanced facet oxidation. In case of an externally applied voltage, the local variation of the Kelvin voltage across the heterostructure layer sequence is analyzed. A clear correlation between macroscopic I-V-characteristics and the microscopic data obtained with the KPFM is found.

Paper Details

Date Published: 8 February 2007
PDF: 11 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730Z (8 February 2007); doi: 10.1117/12.704855
Show Author Affiliations
André Lochthofen, Univ. Duisburg-Essen (Germany)
Wolfgang Mertin, Univ. Duisburg-Essen (Germany)
Gerd Bacher, Univ. Duisburg-Essen (Germany)
Michael Furitsch, OSRAM Opto Semiconductors (Germany)
Georg Brüderl, OSRAM Opto Semiconductors (Germany)
Berthold Hahn, OSRAM Opto Semiconductors (Germany)
Uwe Strauss, OSRAM Opto Semiconductors (Germany)
Volker Härle, OSRAM Opto Semiconductors (Germany)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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