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Proceedings Paper

A novel pixel structure for 2 µm square pixel IT-CCD
Author(s): Gen Sakoda; Mitsuru Sato; Dai Sugimoto; Koichi Maari; Shinji Miyazawa; Takeshi Takeda; Masao Kimura; Takeshi Fujioka; Makoto Fujishima; Yuya Kani; Hideo Kanbe
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Paper Abstract

A pixel structure suitable for an interline transfer charge-coupled device (IT-CCD) image sensor with a pixel size of 2 &mgr;m square or less was developed. The first feature relates to the structure of a transfer electrode, which consists of island transfer electrodes and horizontally continuous transfer electrodes, alternately placed in the form of a single layer. The island electrode is connected with polysilicon wiring formed on the horizontally continuous electrode. This pixel structure eliminates one of two electrodes on the channel stop region of the conventional single layer electrode structure. Over 30% Expansion of the photosensitive areas of 2 &mgr;m square pixel compared to the conventional design was achieved. Carrier crosstalk between adjacent pixels, often caused by application of read-out voltage to the channel stop region, is successfully suppressed in the new structure. The second feature comes from the photo-shield shape around the photodiode. By removing the extension of the photo-shield and reducing the thickness of the lateral side of the photo-shield, the fill factor can be expanded by 70%. In addition, the eclipse of incident light by the photo-shield above the vertical register is suppressed. These developments have led to the achievement of high performance in photo-sensitivity, especially in the small F number region, sensitivity shading, handling charge of the photo diode, and have provided a beneficial solution for sub-2 &mgr;m square pixel IT-CCD.

Paper Details

Date Published: 21 February 2007
PDF: 8 pages
Proc. SPIE 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII, 650104 (21 February 2007); doi: 10.1117/12.704641
Show Author Affiliations
Gen Sakoda, Sony Corp. (Japan)
Mitsuru Sato, Sony Corp. (Japan)
Dai Sugimoto, Sony Corp. (Japan)
Koichi Maari, Sony Corp. (Japan)
Shinji Miyazawa, Sony Corp. (Japan)
Takeshi Takeda, Sony Corp. (Japan)
Masao Kimura, Sony Corp. (Japan)
Takeshi Fujioka, Sony Corp. (Japan)
Makoto Fujishima, Sony LSI Design Inc. (Japan)
Yuya Kani, Sony LSI Design Inc. (Japan)
Hideo Kanbe, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 6501:
Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII
Morley M. Blouke, Editor(s)

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