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Proceedings Paper

Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications
Author(s): Ashok K. Sood; Yash R. Puri; Frederick W. Clarke; Jie Deng; James C. M. Hwang; Steven K. Brierley; M. Asif Khan; Amir Dabiran; Peter Chow; Oleg A. Laboutin; Roger E. Welser
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Paper Abstract

GaN / Al1-xGaxN-based hetero-structures have demonstrated a versatility in RF electronic applications which is practically unmatched by any other material system. There are many device structures under consideration for use in RF and Power amplifiers, suitable for both commercial and military applications. In this paper, we will discuss HEMT device design and growth of GaN/AlGaN layers on semi-insulating SiC substrates by MBE and MOCVD. Both of the growth techniques have shown high quality GaN /AlGaN epitaxial layers and have demonstrated very uniform epitaxial layers with high mobility. The MBE growth was carried out using RF Plasma Assisted MBE. The MOCVD growth was performed in a close-coupled showerhead reactor operating at low pressure. All HEMT structures were grown on 2-inch semi-insulating SiC substrates. Several of the HEMT wafers grown by these two growth techniques were characterized in detail using AFM measurements of the surface roughness, and non-destructive characterization via contact-less sheet resistance mapping, optical reflectance, and high-resolution X-ray diffraction. Several of the wafers were fabricated into HEMT devices, and the results on these devices are also presented.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647318 (8 February 2007); doi: 10.1117/12.704201
Show Author Affiliations
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Yash R. Puri, Magnolia Optical Technologies, Inc. (United States)
Frederick W. Clarke, U.S. Army Space and Missile Defense Command (United States)
Jie Deng, Lehigh Univ. (United States)
James C. M. Hwang, Lehigh Univ. (United States)
Steven K. Brierley, Raytheon RF Components (United States)
M. Asif Khan, Univ. of South Carolina (United States)
Amir Dabiran, SVT Associates, Inc. (United States)
Peter Chow, SVT Associates, Inc. (United States)
Oleg A. Laboutin, Kopin Corp. (United States)
Roger E. Welser, Kopin Corp. (United States)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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