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Proceedings Paper

5-GHz optical front-end for active pixel applications in standard 0.35-μm CMOS
Author(s): Mengxiong Li; Barrie Hayes-Gill; Matt Clark; Mark Pitter; Mike Somekh; Ian Harrison
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Paper Abstract

A monolithically integrated, high speed optical front-end for optical sensing application in standard 0.35-micron CMOS technology is reported. The proposed receiver consists of an integrated photodiode, a transimpedance amplifier, a mixer, an IF amplifier and an output buffer. By treating the n-well in standard CMOS technology as a screening terminal to block the slow photo-generated bulk carriers and interdigitizing shallow p- junctions as the active region, the integrated photodiode operates up to several gigahertz with no process modification. With multi-inductive-series peaking technique, the improved regulated cascade (RGC) transimpedance amplifier achieves an experimentally measured -3 dB bandwidth of more than 6 GHz and a transimpedance gain of 51 dB(omega), which is the fastest reported TIA in CMOS 0.35-micron technology. The 5 GHz broadband mixer produces a conversion gain of 13 dB which greatly minimizes the noise contribution from the IF amplification stage. The optical front-end of the active pixel demonstrates a -3 dB bandwidth of 4.9 GHz while consuming a current of 40 mA from 3.3 V power supply. This work presents the highest bandwidth for fully integrated CMOS optical receivers reported to date.

Paper Details

Date Published: 23 March 2007
PDF: 8 pages
Proc. SPIE 6477, Silicon Photonics II, 647708 (23 March 2007); doi: 10.1117/12.704147
Show Author Affiliations
Mengxiong Li, Univ. of Nottingham (United Kingdom)
Barrie Hayes-Gill, Univ. of Nottingham (United Kingdom)
Matt Clark, Univ. of Nottingham (United Kingdom)
Mark Pitter, Univ. of Nottingham (United Kingdom)
Mike Somekh, Univ. of Nottingham (United Kingdom)
Ian Harrison, Univ. of Nottingham (United Kingdom)


Published in SPIE Proceedings Vol. 6477:
Silicon Photonics II
Joel A. Kubby; Graham T. Reed, Editor(s)

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