Share Email Print

Proceedings Paper

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate
Author(s): Sang-Ho Seo; Kyoung-Do Kim; Jae-Sung Kong; Jang-Kyoo Shin; Pyung Choi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 &mgr;m 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 &mgr;m pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 103 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Paper Details

Date Published: 21 February 2007
PDF: 9 pages
Proc. SPIE 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII, 650111 (21 February 2007); doi: 10.1117/12.703770
Show Author Affiliations
Sang-Ho Seo, Kyungpook National Univ. (South Korea)
Kyoung-Do Kim, Kyungpook National Univ. (South Korea)
Jae-Sung Kong, Kyungpook National Univ. (South Korea)
Jang-Kyoo Shin, Kyungpook National Univ. (South Korea)
Pyung Choi, Kyungpook National Univ. (South Korea)

Published in SPIE Proceedings Vol. 6501:
Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII
Morley M. Blouke, Editor(s)

© SPIE. Terms of Use
Back to Top