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Proceedings Paper

Subpicosecond time-resolved Raman studies of LO phonons in GaN
Author(s): K. T. Tsen; Juliann G. Kiang; D. K. Ferry; H. Morkoç
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Paper Abstract

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN at T = 300K for photoexcited electron-hole pair density ranging from 1016cm-3 to 2x1019 cm-3. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Our experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730Q (8 February 2007); doi: 10.1117/12.703681
Show Author Affiliations
K. T. Tsen, Arizona State Univ. (United States)
Juliann G. Kiang, Armed Forces Radiobiology Research Institute (United States)
Uniformed Services Univ. of the Health Sciences (United States)
D. K. Ferry, Arizona State Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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