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Proceedings Paper

Insulator engineering in GaN-based MIS HFETs
Author(s): Narihiko Maeda; Masanobu Hiroki; Noriyuki Watanabe; Yasuhiro Oda; Haruki Yokoyama; Takuma Yagi; Toshiki Makimoto; Takatomo Enoki; Takashi Kobayashi
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Paper Abstract

Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), i.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated that exhibited excellent DC and RF characteristics together with the reduced gate leakage current (Ig). The Al2O3/ Si3N4 bilayer gate insulator was used to simultaneously utilize (i) the high-quality interface between Si3N4 and AlGaN, and (ii) the high resistivity and high dielectric constant of Al2O3. The Ig was less than 10-4 A/mm even at a gate voltage of +3 V. In a device with a gate length of 0.1 &mgr;m, the drain current was 1.30 A/mm, and the cut-off frequency (f&Tgr;) and maximum oscillation frequency (fmax) were 70 and 90 GHz, respectively. Moreover, the deposition effect of insulators on the electrical properties in AlGaN/GaN heterostructures has been examined and theoretically analyzed for Si- and Al-based insulators (Si3N4, SiO2, AlN, and Al2O3), because insulators are commonly used for surface passivation as well as the gate insulator, and hence, clarifying the insulator deposition effect is a fundamental issue in GaN-based HFETs. The increase in the two-dimensional electron gas (2DEG) was observed for all the insulators, and the effect was found to vary among insulators. One result is that Al2O3 was most effective to increase Ns. The results were explained in terms of the change in the potential profile. The band engineering including insulators is proposed to be indispensable for interpreting and designing the device performance, because, through the potential profile change, the essential device parameters are altered such as the source resistance, the channel resistance under the insulated-gate, and its threshold voltage.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647316 (8 February 2007); doi: 10.1117/12.703659
Show Author Affiliations
Narihiko Maeda, NTT Corp. (Japan)
Masanobu Hiroki, NTT Corp. (Japan)
Noriyuki Watanabe, NTT Corp. (Japan)
Yasuhiro Oda, NTT Corp. (Japan)
Haruki Yokoyama, NTT Corp. (Japan)
Takuma Yagi, NTT Advanced Technology Corp. (Japan)
Toshiki Makimoto, NTT Corp. (Japan)
Takatomo Enoki, NTT Corp. (Japan)
Takashi Kobayashi, NTT Corp. (Japan)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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