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Proceedings Paper

Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures
Author(s): Cheng-Wei Hung; Chih-Chun Ke; Da-Chuan Kuo; Wei-Jen Chen; Hui-Tang Shen; Ya-Fen Wu; Jen-Cheng Wang; Tzer-En Nee
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Paper Abstract

The anomalous Berthelot-type optical properties of quaternary AlInGaN heterostructure with different quantum well pairs have been systematically investigated in this study. The Berthelot-type model refers to the temperature dependence of emission intensity with blue then red shift behavior in disorder material system. The photoluminescence of the AlInGaN heterostructures is also found to exhibit such unique luminescence features as S-shaped emission peak energy similar to Berthelot-type properties over temperature. We ascribed the phenomenon to the spinodal decompositions, which will lead to the appearance of the Berthelot-type behavior. The increase of quantum well pairs will cause the incorporation of indium and/or aluminum atoms in the AlInGaN nanostructures more obviously, resulting in augmentation of the degree of crystalline randomization. In other words, the higher degree of disorder in AlInGaN heterostructures is observed to manifest not only the extension of static microbarrier width, but also the enhancement of carrier localization effects.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730C (8 February 2007); doi: 10.1117/12.703478
Show Author Affiliations
Cheng-Wei Hung, Chang Gung Univ. (Taiwan)
Chih-Chun Ke, Chang Gung Univ. (Taiwan)
Da-Chuan Kuo, Chang Gung Univ. (Taiwan)
Wei-Jen Chen, Chang Gung Univ. (Taiwan)
Hui-Tang Shen, Chang Gung Univ. (Taiwan)
Ya-Fen Wu, Chang Gung Univ. (Taiwan)
Jen-Cheng Wang, Chang Gung Univ. (Taiwan)
Tzer-En Nee, Chang Gung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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