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Proceedings Paper

Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures
Author(s): Chih-Chun Ke; Cheng-Wei Hung; Da-Chuan Kuo; Wei-Jen Chen; Hui-Tang Shen; Ya-Fen Wu; Jen-Cheng Wang; Tzer-En Nee
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Paper Abstract

Nitride-based light-emitting diodes (LEDs) have recently attracted to understand the emission mechanisms in novel multiple quantum well (MQW) heterosturctures. To understand substantially the unique spectral response, it is necessary to examine the carrier transport behavior. In this work, we studied the unique correlations between the carrier dynamics and optical characteristics of the quaternary AlInGaN MQW heterostructures with different barrier widths. It has been found that the photoluminescence peak energy of quaternary AlInGaN MQW blueshifts when decreasing the barrier width. This is attributed to the redistribution among the well and barrier of the strong electrostatic fields induced by polarization effect. It resulted in not only the diminutions of the charge density induced by piezoelectric field, but also the increments of the interface-state charge distribution from the collective influence of alloy disorder and interface roughness. We resort the Arrhenius plots to demonstrate the localized effect originated from indium fluctuation. Our results show the exciton-localization effect can be enhanced monotonically by increasing the barrier widths. On the other hand, we corroborated the surface charge density increased while increasing barrier widths between the epitaxial layers in this investigation.

Paper Details

Date Published: 8 February 2007
PDF: 7 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730B (8 February 2007); doi: 10.1117/12.703472
Show Author Affiliations
Chih-Chun Ke, Chang Gung Univ. (Taiwan)
Cheng-Wei Hung, Chang Gung Univ. (Taiwan)
Da-Chuan Kuo, Chang Gung Univ. (Taiwan)
Wei-Jen Chen, Chang Gung Univ. (Taiwan)
Hui-Tang Shen, Chang Gung Univ. (Taiwan)
Ya-Fen Wu, Chang Gung Univ. (Taiwan)
Jen-Cheng Wang, Chang Gung Univ. (Taiwan)
Tzer-En Nee, Chang Gung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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