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Proceedings Paper

Recent advances in high speed silicon optical modulator
Author(s): Ansheng Liu; Ling Liao; Doron Rubin; Hat Nguyen; Berkehan Ciftcioglu; Yoel Chetrit; Rami Cohen; Nahum Izhaky; Juthika Basak; Mario Paniccia
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Paper Abstract

High-speed silicon optical modulator is one of key components for integrated silicon photonic chip aiming at Tb/s data transmission for next generation communication networks as well as future high performance computing applications. In this paper we review the recent development of the silicon modulator. In particular, we present a high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect. The fast refractive index modulation of the device is due to electric-field-induced carrier depletion in a Silicon-on-Insulator waveguide containing a reverse biased pn junction. To achieve high-speed performance, a traveling-wave design is employed to allow co-propagation of electrical and optical signals along the waveguide. We demonstrate high-frequency modulator optical response with 3 dB bandwidth of ~20 GHz and data transmission up to 30 Gb/s. We also highlight the future device optimization for 40 Gb/s and beyond.

Paper Details

Date Published: 9 February 2007
PDF: 9 pages
Proc. SPIE 6477, Silicon Photonics II, 647710 (9 February 2007); doi: 10.1117/12.703127
Show Author Affiliations
Ansheng Liu, Intel Corp. (United States)
Ling Liao, Intel Corp. (United States)
Doron Rubin, Intel Corp. (Israel)
Hat Nguyen, Intel Corp. (United States)
Berkehan Ciftcioglu, Intel Corp. (United States)
Yoel Chetrit, Intel Corp. (Israel)
Rami Cohen, Intel Corp. (Israel)
Nahum Izhaky, Intel Corp. (Israel)
Juthika Basak, Intel Corp. (United States)
Mario Paniccia, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6477:
Silicon Photonics II
Joel A. Kubby; Graham T. Reed, Editor(s)

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