Share Email Print
cover

Proceedings Paper

Recent achievements of AlInGaN based laser diodes in blue and green wavelength
Author(s): T. Jang; O. H. Nam; K. H. Ha; S. N. Lee; J. K. Son; H. Y. Ryu; K. S. Kim; H. S. Paek; Y. J. Sung; H. G. Kim; S. H. Chae; Y. H. Kim; Y. Park
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

AlInGaN based blue and blue-green LDs were investigated with regard to the characteristics of GaN semiconductor laser diodes. High power, single mode blue LDs with high COD level (~334mW under CW operation at 25°C, kink-free at 150mW) and long lifetime (~10000 hours under CW operation, 50mW 25°C) were achieved. No significant characteristic differences between blue LDs on LEO-GaN/sapphire and GaN substrate were observed. The blue-green LD which has the wavelength of 485 nm was successfully fabricated and demonstrated under CW operation 25°C, while it showed poor performances of LD characteristics compared to those of blue LDs. We believe that the poor performance of blue-green LDs were caused by the piezo-electric effect by lattice mismatch along C-axis of GaN, In fluctuation by lattice mismatch and In solubility limit in InGaN QWs and thermal annealing which was performed during the p-layer growth.

Paper Details

Date Published: 8 February 2007
PDF: 11 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730X (8 February 2007); doi: 10.1117/12.702998
Show Author Affiliations
T. Jang, Samsung Advanced Institute of Technology (South Korea)
O. H. Nam, Samsung Advanced Institute of Technology (South Korea)
K. H. Ha, Samsung Advanced Institute of Technology (South Korea)
S. N. Lee, Samsung Advanced Institute of Technology (South Korea)
J. K. Son, Samsung Advanced Institute of Technology (South Korea)
H. Y. Ryu, Samsung Advanced Institute of Technology (South Korea)
K. S. Kim, Samsung Advanced Institute of Technology (South Korea)
H. S. Paek, Samsung Advanced Institute of Technology (South Korea)
Y. J. Sung, Samsung Advanced Institute of Technology (South Korea)
H. G. Kim, Samsung Advanced Institute of Technology (South Korea)
S. H. Chae, Samsung Advanced Institute of Technology (South Korea)
Y. H. Kim, Samsung Advanced Institute of Technology (South Korea)
Y. Park, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

© SPIE. Terms of Use
Back to Top