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Proceedings Paper

High efficiency DOEs at large diffraction angles for quantum information and computing architectures
Author(s): A. A. Cruz-Cabrera; S. A. Kemme; J. R. Wendt; D. Kielpinski; E. W. Streed; T. R. Carter; S. Samora
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Paper Abstract

We developed techniques to design higher efficiency diffractive optical elements (DOEs) with large numerical apertures (NA) for quantum computing and quantum information processing. Large NA optics encompass large solid angles and thus have high collection efficiencies. Qubits in ion trap architectures are commonly addressed and read by lasers1. Large-scale ion-trap quantum computing2 will therefore require highly parallel optical interconnects. Qubit readout in these systems requires detecting fluorescence from the nearly isotropic radiation pattern of single ions, so efficient readout requires optical interconnects with high numerical aperture. Diffractive optical element fabrication is relatively mature and utilizes lithography to produce arrays compatible with large-scale ion-trap quantum computer architectures. The primary challenge of DOEs is the loss associated with diffraction efficiency. This is due to requirements for large deflection angles, which leads to extremely small feature sizes in the outer zone of the DOE. If the period of the diffractive is between &lgr; (the free space wavelength) and 10&lgr;, the element functions in the vector regime. DOEs in this regime, particularly between 1.5&lgr; and 4&lgr;, have significant coupling to unwanted diffractive orders, reducing the performance of the lens. Furthermore, the optimal depth of the zones with periods in the vector regime differs from the overall depth of the DOE. We will present results indicating the unique behaviors around the 1.5&lgr; and 4&lgr; periods and methods to improve the DOE performance.

Paper Details

Date Published: 8 February 2007
PDF: 9 pages
Proc. SPIE 6482, Advanced Optical and Quantum Memories and Computing IV, 648209 (8 February 2007); doi: 10.1117/12.702133
Show Author Affiliations
A. A. Cruz-Cabrera, Sandia National Labs. (United States)
S. A. Kemme, Sandia National Labs. (United States)
J. R. Wendt, Sandia National Labs. (United States)
D. Kielpinski, Griffith Univ. (Australia)
E. W. Streed, Griffith Univ. (Australia)
T. R. Carter, L&M Technologies (United States)
S. Samora, L&M Technologies (United States)


Published in SPIE Proceedings Vol. 6482:
Advanced Optical and Quantum Memories and Computing IV
Zameer U. Hasan; Alan E. Craig; Selim M. Shahriar; Hans J. Coufal, Editor(s)

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