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Proceedings Paper

Polarimetric imaging cross talk effects from glue separation between FPA and micropolarizer arrays at the MWIR
Author(s): A. A. Cruz-Cabrera; S. A. Kemme; J. R. Wendt; R. R. Boye; T. R. Carter; S. Samora
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Paper Abstract

We have numerically and experimentally determined the effect of crosstalk from adjacent gold wiregrid micropolarizer pixels in a midwave infrared (MWIR) focal plane array (FPA). Fabrication of a snapshot polarization-imaging device involves gluing a micropolarizer array substrate on top of an FPA. We evaluated several arrays of super-cells of four pixelated polarizers by modeling the near fields behind the devices. Each polarizer in the super-cell is oriented to allow solving three Stokes parameters by themselves or four Stokes parameters in conjunction with a birefringent waveplate. In addition, we fabricated sets of super-cells for determining optimum polarizer-FPA separation. Modeling and empirical data indicate cross talk between the adjacent pixels at several microns after crossing the polarizer plane. Cross talk between adjacent pixels increases uncertainty in the measured polarization states of a scene of interest. Data shows that the extinction ratio will decrease by 17% when moving the FPA from 0.5 &mgr;m to 1.0 &mgr;m away from the polarizer. These changes in extinction ratio are important given that typical glue separation is approximately 10 &mgr;m.

Paper Details

Date Published: 9 February 2007
PDF: 13 pages
Proc. SPIE 6478, Photonics Packaging, Integration, and Interconnects VII, 64780Q (9 February 2007); doi: 10.1117/12.702084
Show Author Affiliations
A. A. Cruz-Cabrera, Sandia National Labs. (United States)
S. A. Kemme, Sandia National Labs. (United States)
J. R. Wendt, Sandia National Labs. (United States)
R. R. Boye, Sandia National Labs. (United States)
T. R. Carter, L&M Technologies (United States)
S. Samora, L&M Technologies (United States)

Published in SPIE Proceedings Vol. 6478:
Photonics Packaging, Integration, and Interconnects VII
Allen M. Earman; Ray T. Chen, Editor(s)

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