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Proceedings Paper

Optimization of development process using after develop inspection in mask manufacturing
Author(s): Hyun Young Kim; Dae Ho Hwang; Sang Pyo Kim; Oscar Han; Ki Hun Park; Nam Wook Kim; David Kim
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Paper Abstract

As the design rule continues to shrink towards 65nm and beyond, the defect criteria is becoming ever more challenging. The pattern fidelity and reticle defects that were once considered as insignificant or nuisance are now migrating to yield-limiting. As a result, it is important to conduct After Develop Inspection (ADI) to identify where in the process the small contamination and particles originate from. The intent of this study is to identify the defect source by utilizing KLA-Tencor's SLF die-to-die reflected light mode and ADI algorithm for the post development resist layer inspection.

Paper Details

Date Published: 20 October 2006
PDF: 9 pages
Proc. SPIE 6349, Photomask Technology 2006, 63493Q (20 October 2006); doi: 10.1117/12.702033
Show Author Affiliations
Hyun Young Kim, Hynix Semiconductor Inc. (South Korea)
Dae Ho Hwang, Hynix Semiconductor Inc. (South Korea)
Sang Pyo Kim, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)
Ki Hun Park, KLA-Tencor (United States)
Nam Wook Kim, KLA-Tencor (United States)
David Kim, KLA-Tencor (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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