Share Email Print
cover

Proceedings Paper

Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia
Author(s): Sergey A. Nikishin; Boris A. Borisov; Gregory A Garrett; Wendy L. Sarney; Anand V. Sampath; Hongen Shen; Michael Wraback; Mark Holtz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report the structural and optical properties of AlxGa1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa1-yN, 0.3xGa1-xN, 0.55

Paper Details

Date Published: 8 February 2007
PDF: 7 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647306 (8 February 2007); doi: 10.1117/12.701394
Show Author Affiliations
Sergey A. Nikishin, Texas Tech Univ. (United States)
Boris A. Borisov, Texas Tech Univ. (United States)
Gregory A Garrett, U.S. Army Research Lab. (United States)
Wendy L. Sarney, U.S. Army Research Lab. (United States)
Anand V. Sampath, U.S. Army Research Lab. (United States)
Hongen Shen, U.S. Army Research Lab. (United States)
Michael Wraback, U.S. Army Research Lab. (United States)
Mark Holtz, Texas Tech Univ. (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

© SPIE. Terms of Use
Back to Top