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Proceedings Paper

High-brightness semiconductor lasers
Author(s): M. L. Osowski; W. Hu; R. M. Lammert; T. Liu; Y. Ma; S. W. Oh; C. Panja; P. T. Rudy; T. Stakelon; J. E. Ungar
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Paper Abstract

We present recent advances in high power semiconductor lasers including increased spectral brightness using on-chip internal gratings and increased spatial brightness at wavelengths from the near infrared to the eye-safe regime.

Paper Details

Date Published: 14 February 2007
PDF: 7 pages
Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560D (14 February 2007); doi: 10.1117/12.701331
Show Author Affiliations
M. L. Osowski, Quintessence Photonics Corp. (United States)
W. Hu, Quintessence Photonics Corp. (United States)
R. M. Lammert, Quintessence Photonics Corp. (United States)
T. Liu, Quintessence Photonics Corp. (United States)
Y. Ma, Quintessence Photonics Corp. (United States)
S. W. Oh, Quintessence Photonics Corp. (United States)
C. Panja, Quintessence Photonics Corp. (United States)
P. T. Rudy, Quintessence Photonics Corp. (United States)
T. Stakelon, Quintessence Photonics Corp. (United States)
J. E. Ungar, Quintessence Photonics Corp. (United States)


Published in SPIE Proceedings Vol. 6456:
High-Power Diode Laser Technology and Applications V
Mark S. Zediker, Editor(s)

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