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Proceedings Paper

Very high-power 1310nm InP single mode distributed feed back laser diode with reduced linewidth
Author(s): Pierre Doussiere; Chan-Long Shieh; Scott DeMars; Ken Dzurko
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Paper Abstract

High power single mode InGaAsP/InP DFB laser diodes with narrow linewidth and emitting near 1310nm are key devices for Analog transmission and Sensor applications since they can be rugged and compact sources more suited to harsh environment than solid-state or fiber-based lasers. Typically, the useful output power of DFB sources is limited to about 100mW when sub-MHz linewidth is required Ref [1] by the so-called "re-broadening effect" which causes the spectral linewidth to increase due to spatial-hole burning and other effects. We report here sub-MHz linewidth at output power levels exceeding 500mW resulting from cavity design that successfully addresses the concerns of linewidth re-broadening. Single-frequency operation can be maintained from threshold to the high power operating point without mode hops.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850G (8 February 2007); doi: 10.1117/12.701321
Show Author Affiliations
Pierre Doussiere, JDS Uniphase Corp. (United States)
Chan-Long Shieh, JDS Uniphase Corp. (United States)
Scott DeMars, JDS Uniphase Corp. (United States)
Ken Dzurko, JDS Uniphase Corp. (United States)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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