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Proceedings Paper

Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes
Author(s): S.-Q. Yu; J.-B. Wang; D. Ding; S. R. Johnson; D. Vasileska; Y.-H. Zhang
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Paper Abstract

The fundamental mechanisms of electroluminescence (EL) refrigeration in heterostructure light emitting diodes, is examined via carrier energy loss (and gain) during transport, relaxation, and recombination, where the contribution of electrons and holes are treated separately. This analysis shows that the EL refrigeration process is a combination of thermoelectric cooling that mainly occurs near the metal/semiconductor contacts and radiative recombination which mainly occurs in the active region. In semiconductors such as GaAs, electrons and holes make different contributions to the refrigeration processes as a result of their different densities of states.

Paper Details

Date Published: 26 February 2007
PDF: 6 pages
Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 648604 (26 February 2007); doi: 10.1117/12.701301
Show Author Affiliations
S.-Q. Yu, Arizona State Univ. (United States)
J.-B. Wang, Arizona State Univ. (United States)
D. Ding, Arizona State Univ. (United States)
S. R. Johnson, Arizona State Univ. (United States)
D. Vasileska, Arizona State Univ. (United States)
Y.-H. Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 6486:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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