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Proceedings Paper

Optical modulation from an electro-optic polymer based hybrid Fabry-Perot etalon using transparent conducting oxides
Author(s): Haiyong Gan; Hongxi Zhang; Christopher T. DeRose; Robert A. Norwood; Mahmoud Fallahi; Jingdong Luo; Alex K.-Y. Jen; Boyang Liu; Seng-Tiong Ho; Nasser Peyghambarian
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Paper Abstract

Fabry-Perot etalons using electro-optic (EO) organic materials can be used for devices such as tunable filters and spatial light modulators (SLM's) for wavelength division multiplexing (WDM) communication systems1-5 and ultrafast imaging systems. For these applications the SLM's need to have: (i) low insertion loss, (ii) high speed operation, and (iii) large modulation depth with low drive voltage. Recently, there have been three developments which together can enhance the SLM performance to a higher level. First, low loss distributed Bragg reflector (DBR) mirrors are now used in SLM's to replace thin metal mirrors, resulting in reduced transmission loss, high reflectivity (>99%) and high finesse. Second, EO polymer materials have shown excellent properties for wide bandwidth optical modulation for information technology due to their fabrication flexibility, compatibility with high speed operation, and large EO coefficients at telecommunication wavelengths. For instance, the EO polymer AJL8/APC (AJL8: nonlinear optical chromophore, and APC: amorphous polycarbonate has recently been incorporated into waveguide modulators and achieved good performance for optical modulation. Finally, very low loss transparent conducting oxide (TCO) electrodes have drawn increasing attention for applications in optoelectronic devices. Here we will address how the low loss indium oxide (In2O3) electrodes with an absorption coefficient ~1000/cm and conductivity ~204 S/cm can help improve the modulation performance of EO polymer Fabry-Pérot étalons using the advanced electro-optic (EO) polymer material (AJL8/APC). A hybrid etalon structure with one highly conductive indium tin oxide (ITO) electrode outside the etalon cavity and one low-absorption In2O3 electrode inside etalon cavity has been demonstrated. High finesse (~234), improved effective applied voltage ratio (~0.25), and low insertion loss (~4 dB) have been obtained. A 10 dB isolation ratio and ~10% modulation depth at 200 kHz with only 5 V applied voltage have been achieved. These results indicate that such etalons are very promising candidates for ultrafast spatial light modulation in information technology.

Paper Details

Date Published: 7 February 2007
PDF: 8 pages
Proc. SPIE 6470, Organic Photonic Materials and Devices IX, 64700F (7 February 2007); doi: 10.1117/12.701256
Show Author Affiliations
Haiyong Gan, College of Optical Sciences, Univ. of Arizona (United States)
Hongxi Zhang, College of Optical Sciences, Univ. of Arizona (United States)
Christopher T. DeRose, College of Optical Sciences, Univ. of Arizona (United States)
Robert A. Norwood, College of Optical Sciences, Univ. of Arizona (United States)
Mahmoud Fallahi, College of Optical Sciences, Univ. of Arizona (United States)
Jingdong Luo, Univ. of Washington (United States)
Alex K.-Y. Jen, Univ. of Washington (United States)
Boyang Liu, Northwestern Univ. (United States)
Seng-Tiong Ho, Northwestern Univ. (United States)
Nasser Peyghambarian, College of Optical Sciences, Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 6470:
Organic Photonic Materials and Devices IX
James G. Grote; Francois Kajzar; Nakjoong Kim, Editor(s)

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