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Proceedings Paper

Efficient and compact silicon-on-insulator rib waveguide 90 degree bends and splitters
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Paper Abstract

Silicon-on-insulator (SOI) is a widely recognized as a very promising material for high-index integrated photonic chips because of its compatibility with complementary metal oxide semiconductor (CMOS) technologies. One challenge in integrating many photonic devices on a single chip is to realize compact waveguide bends and splitters, particularly for rib waveguide geometries. We report compact SOI rib waveguide 90° bends and splitters with SU8-filled trenches based on total internal reflection (TIR). We use the two-dimensional finite difference time domain (2D-FDTD) method to numerically calculate bend and splitter efficiencies. The maximum bend efficiency is 98.0%. The splitter efficiency is 49.0% for transmission and 48.9% for reflection with an 80 nm wide SU8-filled trench. Electron beam lithography (EBL) is used to accurately position the trench interface relative to the waveguides and to pattern the 80 nm wide trench. Inductively coupled plasma reactive ion etching (ICP RIE) is used to achieve a vertical sidewall. For fabricated bends the measured bend loss is 0.32±0.02 dB/bend (93% bend efficiency) for TE polarization at a wavelength of 1.55 microns, which is the lowest SOI rib waveguide 90° bend loss reported in literature. The initial measured splitter efficiency is 54.6% for transmission and 29.2% for reflection. This can be improved by avoiding defects in fabricated structures.

Paper Details

Date Published: 9 February 2007
PDF: 8 pages
Proc. SPIE 6477, Silicon Photonics II, 64770I (9 February 2007); doi: 10.1117/12.700932
Show Author Affiliations
Yusheng Qian, Brigham Young Univ. (United States)
Seunghyun Kim, Brigham Young Univ. (United States)
Jiquo Song, Brigham Young Univ. (United States)
Gregory P. Nordin, Brigham Young Univ. (United States)
Jianhua Jiang, The Univ. of Alabama in Huntsville (United States)


Published in SPIE Proceedings Vol. 6477:
Silicon Photonics II
Joel A. Kubby; Graham T. Reed, Editor(s)

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