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Proceedings Paper

Quantum 3D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum-dot nanostructures
Author(s): Yik-Khoon Ee; Yush P. Gupta; Ronald A. Arif; Nelson Tansu
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Paper Abstract

Here we present a full 3-D numerical model based on Quantum-Finite-Difference-Time-Domain (Q-FDTD) method, with Perfectly Matched Layer (PML) boundary condition, as a versatile tool to accurately analyze 3-D QD nanostructure with arbitrary shape. Model solid theory has been utilized to determine the 3-D band lineup of the QD heterostructure. The effects of strain distribution, and effective mass distribution on the band structure of the QD nanostructure are also taken into account in the model. The Q-FDTD computation has been applied for analyzing MOCVD-grown InGaAs QDs with GaAs1-xPx barriers on GaAs. The Q-FDTD simulation, using the QDs shape measured by TEM and AFM, shows good agreement with the experimental results obtained from the as-grown InGaAs QDs with GaAs1-xPx barriers.

Paper Details

Date Published: 22 March 2007
PDF: 12 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681D (22 March 2007); doi: 10.1117/12.700775
Show Author Affiliations
Yik-Khoon Ee, Lehigh Univ. (United States)
Yush P. Gupta, Lehigh Univ. (United States)
Ronald A. Arif, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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